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Single-event effect performance of a conductive-bridge memory eeprom
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Seidleck, Christina LaBel, Kenneth Berg, Melanie Figueiredo, Marco Phan, Anthony Kim, Hak Chen, Dakai Wilcox, Edward |
| Copyright Year | 2015 |
| Description | We investigated the heavy ion SEE characteristics of an EEPROM based on CBRAM technology. SEFI is the dominant type of SEE for each operating mode (standby, read-only, write/read). We also observed single bit upsets in the CBRAM cell, during write/read tests. the SEULET threshold is between 10 and 20 MeV * sq cm/mg, with an upper fluence limit of 3 Ã 10(exp 6) cm(exp -2) at 10 MeV * sq cm/mg. In the stand by mode, the CBRAM array appears immune to bit upsets. |
| File Size | 1282304 |
| Page Count | 1 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20150023547 |
| Archival Resource Key | ark:/13960/t7wm6919s |
| Language | English |
| Publisher Date | 2015-07-13 |
| Access Restriction | Open |
| Subject Keyword | Single Event Effects Non-volatile Memory Radiation Effects in Ics Heavy Ion Testing Radiation Hardening Radiation Effects Heavy Ions Single Event Upsets Vacuum Tests Random Access Memory Irradiation Pulsed Lasers Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Presentation |
