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Radiation effects of commercial resistive random access memories (Document No: 20140017349)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Berg, Melanie Figueiredo, Marco Buchner, Stephen Roche Sr., Nicolas Khachatrian, Ani Phan, Anthony Kim, Hak LaBel, Kenneth A. Chen, Dakai Wilcox, Edward |
| Copyright Year | 2014 |
| Description | We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications. |
| File Size | 1434798 |
| Page Count | 20 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20140017349 |
| Archival Resource Key | ark:/13960/t6547qc33 |
| Language | English |
| Publisher Date | 2014-06-17 |
| Access Restriction | Open |
| Subject Keyword | Random Access Memory (ram) Radiation Effects Resistive Random Access Memory (rram) Integrated Circuits Heavy Ions Single Event Upsets Random Access Memory Computer Systems Performance Radiation Tolerance Microcomputers Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Presentation |
