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Single-event effects in silicon carbide power devices
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Wilcox, Edward P. Topper, Alyson D. Casey, Megan C. Lauenstein, Jean-Marie Ikpe, Stanley Phan, Anthony M. Kim, Hak LaBel, Kenneth A. |
| Copyright Year | 2015 |
| Description | This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated. |
| File Size | 254709 |
| Page Count | 15 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20150017740 |
| Archival Resource Key | ark:/13960/t75t8n820 |
| Language | English |
| Publisher Date | 2015-06-23 |
| Access Restriction | Open |
| Subject Keyword | Heavy-ion Single-event Effects Power Electronics Failure Rate Prediction Nasa Programs Degradation Schottky Diodes Performance Tests Heavy Ions Electronic Packaging Single Event Upsets Solar Electric Propulsion Radiation Tolerance Silicon Carbides Spacecraft Power Supplies Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Presentation |
