Loading...
Please wait, while we are loading the content...
Similar Documents
Effects of ion atomic number on single-event gate rupture (segr) susceptibility of power mosfets
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Sherman, Phillip Zafrani, Max Lauenstein, Jean-Marie Ladbury, Raymond L. Titus, Jeffrey L. Phan, Anthony M. Goldsman, Neil Liu, Sandra LaBel, Kenneth A. Kim, Hak S. |
| Copyright Year | 2012 |
| Description | The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed. |
| File Size | 707866 |
| Page Count | 9 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20120008333 |
| Archival Resource Key | ark:/13960/t2q57kw4v |
| Language | English |
| Publisher Date | 2012-01-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Gates Circuits Radiation Hardening Heavy Elements Heavy Ions Metal Oxide Semiconductors Ion Irradiation Linear Energy Transfer Let Field Effect Transistors Single Event Upsets Spacecraft Electronic Equipment Radiation Damage Substrates Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
