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Single-event effect report for epc series egan fets: epc2015, epc2014, epc2012
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Scheick, Leif |
| Copyright Year | 2014 |
| Description | Heavy ion testing of newly available eGaN FETs from EPC were tested in May of 2012 at TAM. The EPC2001, EPC2012, and EPC2014 were tested for general single-event effect response from gold and xenon ions. Overall, the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. |
| File Size | 2396361 |
| Page Count | 28 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20140011400 |
| Archival Resource Key | ark:/13960/t0rr6v71f |
| Language | English |
| Publisher Date | 2014-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Degradation Gold Heavy Ions Ion Irradiation Field Effect Transistors Gallium Nitrides Xenon Isolation Oxides Radiation Damage Electronic Equipment Tests Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
