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Single-event effect report for epc series egan fets: epc1001, epc1010, epc1014, epc1012
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Scheick, Leif |
| Copyright Year | 2013 |
| Description | Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012 |
| File Size | 3573871 |
| Page Count | 43 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20140000669 |
| Archival Resource Key | ark:/13960/t5cc60p70 |
| Language | English |
| Publisher Date | 2013-02-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Degradation Isolation Oxides Heavy Ions Field Effect Transistors Xenon Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
