NDLI: Basic equations for the modeling of gallium nitride (gan) high electron mobility transistors (hemts)

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Basic equations for the modeling of gallium nitride (gan) high electron mobility transistors (hemts)

Content Provider	NASA Technical Reports Server (NTRS)
Author	Freeman, Jon C.
Copyright Year	2003
Description	Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).
File Size	2089565
Page Count	70
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_20030014725
Archival Resource Key	ark:/13960/t5s80b60w
Language	English
Publisher Date	2003-02-01
Access Restriction	Open
Subject Keyword	Solid-state Physics Field Effect Transistors Microwave Equipment Gallium Nitrides Piezoelectricity Energy Gaps Solid State High Electron Mobility Transistors Polarization Charge Separation Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Technical Report

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