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A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Kuczmarski, M. A. Gokoglu, S. A. |
| Copyright Year | 1993 |
| Description | Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis. |
| File Size | 597551 |
| Page Count | 12 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19930017814 |
| Archival Resource Key | ark:/13960/t71w0f443 |
| Language | English |
| Publisher Date | 1993-05-01 |
| Access Restriction | Open |
| Subject Keyword | Silanes Chemical Equilibrium Vapor Deposition Atmospheric Pressure Hydrogen Surface Reactions Vapor Phases Reaction Kinetics Cylindrical Bodies Silicon Carbides Chemical Composition Propane Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |