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Chemical vapor deposition of silicon from silane pyrolysis
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Lutwack, R. Hsu, G. Praturi, A. K. |
| Copyright Year | 1977 |
| Description | The four basic elements in the chemical vapor deposition (CVD) of silicon from silane are analytically treated from a kinetic standpoint. These elements are mass transport of silane, pyrolysis of silane, nucleation of silicon, and silicon crystal growth. Rate expressions that describe the various steps involved in the chemical vapor deposition of silicon were derived from elementary principles. Applications of the rate expressions for modeling and simulation of the silicon CVD are discussed. |
| File Size | 1250555 |
| Page Count | 39 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19770025321 |
| Archival Resource Key | ark:/13960/t6m08x045 |
| Language | English |
| Publisher Date | 1977-07-15 |
| Access Restriction | Open |
| Subject Keyword | Inorganic And Physical Chemistry Silanes Crystal Growth Pyrolysis Vapor Deposition Reaction Kinetics Energy Conversion Silicon Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
