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Influence of alumina reaction tube impurities on the oxidation of chemically-vapor-deposited silicon carbide
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Opila, Elizabeth |
| Copyright Year | 1995 |
| Description | Pure coupons of chemically vapor deposited (CVD) SiC were oxidized for 100 h in dry flowing oxygen at 1300 C. The oxidation kinetics were monitored using thermogravimetry (TGA). The experiments were first performed using high-purity alumina reaction tubes. The experiments were then repeated using fused quartz reaction tubes. Differences in oxidation kinetics, scale composition, and scale morphology were observed. These differences were attributed to impurities in the alumina tubes. Investigators interested in high-temperature oxidation of silica formers should be aware that high-purity alumina can have significant effects on experiment results. |
| File Size | 313743 |
| Page Count | 4 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19970001782 |
| Archival Resource Key | ark:/13960/t16m85r41 |
| Language | English |
| Publisher Date | 1995-04-01 |
| Access Restriction | Open |
| Subject Keyword | Nonmetallic Materials Oxygen Thermogravimetry Silicon Carbides Chemical Reactions High Temperature Quartz Vapor Deposition Impurities Morphology Reaction Kinetics Oxidation Aluminum Oxides Drying Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
