Loading...
Please wait, while we are loading the content...
Similar Documents
Tractable chemical models for cvd of silicon and carbon
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Blanquet, E. Gokoglu, S. A. |
| Copyright Year | 1993 |
| Description | Tractable chemical models are validated for the CVD of silicon and carbon. Dilute silane (SiH4) and methane (CH4) in hydrogen are chosen as gaseous precursors. The chemical mechanism for each systems Si and C is deliberately reduced to three reactions in the models: one in the gas phase and two at the surface. The axial-flow CVD reactor utilized in this study has well-characterized flow and thermal fields and provides variable deposition rates in the axial direction. Comparisons between the experimental and calculated deposition rates are made at different pressures and temperatures.|||||||||||||||| |
| File Size | 268285 |
| Page Count | 7 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20150022237 |
| Archival Resource Key | ark:/13960/t0dv6fx8r |
| Language | English |
| Publisher Date | 1993-01-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Methane Silanes Vapor Phases Finite Volume Method Chemical Reactions Computerized Simulation Carbon Computer Programs Vapor Deposition Surface Reactions Reaction Kinetics Flow Distribution Silicon Deposition Axial Flow Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
