NDLI: Crystal growth of device quality gaas in space

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Crystal growth of device quality gaas in space

Content Provider	NASA Technical Reports Server (NTRS)
Author	Gatos, H. C. Lagowski, J.
Copyright Year	1986
Description	It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.
File Size	1460133
Page Count	36
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19860018524
Archival Resource Key	ark:/13960/t4km45w0m
Language	English
Publisher Date	1986-01-01
Access Restriction	Open
Subject Keyword	Solid-state Physics Stoichiometry Gallium Arsenides Crystal Defects Semiconductor Devices Space Commercialization Melts Crystal Growth Space Processing Electroepitaxy Microgravity Solidification Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Technical Report

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