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Growth of gaas crystals from the melt in a partially confined configuration
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Gatos, Harry C. Lagowski, Jacek |
| Copyright Year | 1988 |
| Description | The experimental approach was directed along two main goals: (1) the implementation of an approach to melt growth in a partially confined configuration; and (2) the investigation of point defect interaction and electronic characteristics as related to thermal treatment following solidification and stoichiometry. Significant progress was made along both fronts. Crystal growth of GaAs in triangular ampuls was already carried out successfully and consistent with the model. In fact, pronounced surface tension phenomena which cannot be observed in ordinary confinement system were identified and should premit the assessment of Maragoni effects prior to space processing. Regarding thermal treatment, it was discovered that the rate of cooling from elevated temperatures is primarily responsible for a whole class of defect interactions affecting the electronic characteristics of GaAs and that stoichiometry plays a critical role in the quality of GaAs. |
| File Size | 2650140 |
| Page Count | 27 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19890010925 |
| Archival Resource Key | ark:/13960/t5n924w7m |
| Language | English |
| Publisher Date | 1988-10-01 |
| Access Restriction | Open |
| Subject Keyword | Materials Processing Stoichiometry Gallium Arsenides Point Defects Temperature Effects Space Commercialization Melts Crystal Growth Space Processing Microgravity Marangoni Convection Solidification Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
