NDLI: Crystal growth of device quality gaas in space (Document No: 19850022622)

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Crystal growth of device quality gaas in space (Document No: 19850022622)

Content Provider	NASA Technical Reports Server (NTRS)
Author	Gatos, H. C. Lagowski, J.
Copyright Year	1985
Description	The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.
File Size	5297661
Page Count	49
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19850022622
Archival Resource Key	ark:/13960/t6k11zj7k
Language	English
Publisher Date	1985-07-01
Access Restriction	Open
Subject Keyword	Solid-state Physics Crystal Growth Single Crystals Stoichiometry Gallium Arsenides Crystal Defects Semiconductors Materials Space Commercialization Space Processing Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Technical Report

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