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Crystal growth of device quality gaas in space (Document No: 19840008945)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Gatos, H. C. Lagowski, J. |
| Copyright Year | 1983 |
| Description | GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance. |
| File Size | 5123153 |
| Page Count | 40 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19840008945 |
| Archival Resource Key | ark:/13960/t7kq2v12r |
| Language | English |
| Publisher Date | 1983-06-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Integrated Circuits Gallium Arsenides Semiconductor Devices Space Commercialization Melts Crystal Growth Mechanical Properties Carrier Mobility Electro-optics Thermal Stability Solidification Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
