NDLI: Crystal growth of device quality gaas in space (Document No: 19840020544)

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Crystal growth of device quality gaas in space (Document No: 19840020544)

Content Provider	NASA Technical Reports Server (NTRS)
Author	Gatos, H. C. Lagowski, J.
Copyright Year	1984
Description	The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.
File Size	9525536
Page Count	182
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19840020544
Archival Resource Key	ark:/13960/t6rz43q8z
Language	English
Publisher Date	1984-07-01
Access Restriction	Open
Subject Keyword	Solid-state Physics Crystal Growth Stoichiometry Gallium Arsenides Crystal Defects Semiconductor Devices Weightlessness Impurities Semiconductors Materials Melts Crystal Growth Space Commercialization Space Processing Electron Mobility Microstructure Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Technical Report

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