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| Content Provider | Directory of Open Access Journals (DOAJ) |
|---|---|
| Author | Inyoung Lee Dae Hwan Kim Daewoong Kang Il Hwan Cho |
| Abstract | Since the most of three dimensional (3D) NAND devices’ channel is composed of polysilicon grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape. In this study, we defined the curvature of the channel as a ‘Wave Factor (WF)’ parameter, and simulated 3D NAND device with the WF applied channel. Various effects of the curvature in the channel on the program and erase operation of the device have been investigated. When the channel is wave-shaped, the electric field tends to be concentrated on the corner region of the blocking oxide during the program operation, which causes increase of the electron back tunneling to the gate. Therefore, program speed degraded as the WF value higher. During the erase operation, the same with program operation, the electric field concentrated on the corner of the blocking oxide increased, enhanced electron back tunneling from the metal gate occurred while less amount of hole charge trapped. As a result, |
| e-ISSN | 21693536 |
| DOI | 10.1109/ACCESS.2022.3212540 |
| Journal | IEEE Access |
| Volume Number | 10 |
| Language | English |
| Publisher | IEEE |
| Publisher Date | 2022-01-01 |
| Publisher Place | United States |
| Access Restriction | Open |
| Subject Keyword | Electrical Engineering. Electronics. Nuclear Engineering Wave-shaped Channel 3d Nand Electron Back Tunneling Poly-si Channel |
| Content Type | Text |
| Resource Type | Article |
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