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| Content Provider | Directory of Open Access Journals (DOAJ) |
|---|---|
| Author | Xin Li Lei Liang Li Jun Wang Li Qin Yong Yi Chen Yu Bing Wang Yue Song Yu Xin Lei Peng Jia Yu Gang Zeng Chuan Tao Zheng Huan Zhao |
| Abstract | Semiconductor optical amplifiers (SOAs) offer direct electrical injection, power consumption, integration, and anti-radiation advantages over optical fiber amplifiers. However, saturation output power and gain bandwidth have been limited in traditional structure SOAs. We demonstrate a monolithic integrated SOA with broad spectrum, high power, high gain, and small spectral linewidth expansion. The device adopts a two-stage amplified large optical cavity structure, and a lower optical field confinement factor is obtained by adjusting the thickness of the waveguide layer. The lower optical field confinement factor is conducive to improving the coupling efficiency and the maximum output power. Our device, fabricated only by standard i-line lithography with micron-scale precision, obtains excellent and stable performance. When the input power is set to 1 mW, the output power is 419 mW with a gain of 26.23 dB. When the input power is set to 25 mW at 25 °C, the output power increases to 600 mW with a gain of 13.8 dB. The corresponding gain bandwidth of 3 dB measures at least 70 nm. The spectral linewidth after the SOA is 1.15 times wider than that of the seed laser. |
| e-ISSN | 21693536 |
| DOI | 10.1109/ACCESS.2021.3096519 |
| Journal | IEEE Access |
| Volume Number | 9 |
| Language | English |
| Publisher | IEEE |
| Publisher Date | 2021-01-01 |
| Publisher Place | United States |
| Access Restriction | Open |
| Subject Keyword | Electrical Engineering. Electronics. Nuclear Engineering Broad Spectrum High Gain High Power Semiconductor Optical Amplifiers Small Linewidth Expansion |
| Content Type | Text |
| Resource Type | Article |
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