NDLI: Read/write robustness estimation metrics for spin transfer torque (STT) MRAM cell

Content Provider	ACM Digital Library
Author	Prinetto, Paolo Vatajelu, Elena I. Rodriguez-Montañés, Rosa Indaco, Marco Figueras, Joan Renovell, Michel
Abstract	The rapid development of low power, high density, high performance SoCs has pushed the embedded memories to their limits and opened the field to the development of emerging memory technologies. The Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency and high CMOS integration capability. Under today aggressive technology scaling requirements, the STT-MRAM is affected by process variability making robustness evaluation an important concern. In this paper, we provide new metrics for robustness prediction of an STT-MRAM memory cell. Independent Robustness Margin metrics are defined for Read Operation and Write Operation based on the electrical characteristics of the memory cell and the fabrication induced variability. These metrics are used to estimate the extreme parameter variation causing the cell failure, Current Noise Margins and the Failure Probability of the STT-MRAM cell.
Starting Page	447
Ending Page	452
Page Count	6
File Format	PDF
ISBN	9783981537048
Language	English
Publisher	Association for Computing Machinery (ACM)
Publisher Date	2015-03-09
Publisher Place	San Jose
Access Restriction	Subscribed
Subject Keyword	Robustness margin metrics Stt-mram Process variability Robustness
Content Type	Text
Resource Type	Article

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Read/write robustness estimation metrics for spin transfer torque (STT) MRAM cell