NDLI: A block-level flash memory management scheme for reducing write activities in PCM-based embedded systems

Content Provider	ACM Digital Library
Author	Wang, Tianzheng Qin, Zhiwei Shao, Zili Liu, Duo Wang, Yi
Abstract	This paper targets at an embedded system with phase change memory (PCM) and NAND flash memory. Although PCM is a promising main memory alternative and is recently introduced to embedded system designs, its endurance keeps drifting down and greatly limits the lifetime of the whole system. Therefore, this paper presents a block-level flash memory management scheme, WAB-FTL, to effectively manage NAND flash memory while reducing write activities of the PCM-based embedded systems. The basic idea is to preserve each bit in flash mapping table hosted by PCM from being inverted frequently during the process of mapping table update. To achieve this, a new merge strategy is adopted in WAB-FTL to delay the mapping table update, and a tiny mapping buffer is used for caching frequently updated mapping records. Experimental results based on Android traces show that WAB-FTL can effectively reduce write activities when compared with the baseline scheme.
Starting Page	1447
Ending Page	1450
Page Count	4
File Format	PDF
ISBN	9783981080186
Language	English
Publisher	Association for Computing Machinery (ACM)
Publisher Date	2012-03-12
Publisher Place	San Jose
Access Restriction	Subscribed
Subject Keyword	Nand flash memory Write activity Endurance Phase change memory Flash translation layer
Content Type	Text
Resource Type	Article

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A block-level flash memory management scheme for reducing write activities in PCM-based embedded systems