NDLI: Error patterns in MLC NAND flash memory: measurement, characterization, and analysis

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Error patterns in MLC NAND flash memory: measurement, characterization, and analysis

Content Provider	ACM Digital Library
Author	Haratsch, Erich F. Cai, Yu Mutlu, Onur Mai, Ken
Abstract	As NAND flash memory manufacturers scale down to smaller process technology nodes and store more bits per cell, reliability and endurance of flash memory reduce. Wear-leveling and error correction coding can improve both reliability and endurance, but finding effective algorithms requires a strong understanding of flash memory error patterns. To enable such understanding, we have designed and implemented a framework for fast and accurate characterization of flash memory throughout its lifetime. This paper examines the complex flash errors that occur at 30-40nm flash technologies. We demonstrate distinct error patterns, such as cycle-dependency, location-dependency and value-dependency, for various types of flash operations. We analyze the discovered error patterns and explain why they exist from a circuit and device standpoint. Our hope is that the understanding developed from this characterization serves as a building block for new error tolerance algorithms for flash memory.
Starting Page	521
Ending Page	526
Page Count	6
File Format	PDF
ISBN	9783981080186
Language	English
Publisher	Association for Computing Machinery (ACM)
Publisher Date	2012-03-12
Publisher Place	San Jose
Access Restriction	Subscribed
Subject Keyword	Nand flash Error patterns Endurance Error correction Reliability
Content Type	Text
Resource Type	Article

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