NDLI: Characterization of Cross-Sectioned Gallium Nitride High-Electron-Mobility Transistors with In Situ Biasing

Content Provider	Springer Nature Link
Author	Hilton, A.M. Brown, J.L. Moore, E.A. Hoelscher, J.A. Heller, E.R. Dorsey, D.L.
Copyright Year	2015
Abstract	AlGaN/GaN high-electron-mobility transistors (HEMTs) were characterized in cross-section by Kelvin probe force microscopy (KPFM) during in situ biasing. The HEMTs used in this study were specially designed to maintain full and representative transistor functionality after cross-sectioning perpendicular to the gate width dimension to expose the active channel from source to drain. A cross-sectioning procedure was established that produces samples with high-quality surfaces and minimal degradation in initial transistor performance. A detailed description of the cross-sectioning procedure is provided. Samples were characterized by KPFM, effectively mapping the surface potential of the device in two-dimensional cross-section, including under metallization layers (i.e., gate, field plates, and ohmic contacts). Under the gate and field plate layers are where electric field, temperature, and temperature gradients are all most commonly predicted to have peak values, and where degradation and failure are most likely, and so this is where direct measurements are most critical. In this work, the surface potential of the operating device was mapped in cross-section by KPFM. Charge redistribution was observed during and after biasing, and the surface potential was seen to decay with time back to the prebias condition. This work is a first step toward directly mapping and localizing the steady-state and transient charge distribution due to point defects (traps) before, during, and after device operation, including normally inaccessible regions such as under metallization layers. Such measurements have not previously been demonstrated for GaN HEMT technology.
Starting Page	3259
Ending Page	3264
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	44
Issue Number	10
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2015-07-10
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	GaN high-electron-mobility transistor (HEMT) degradation Kelvin probe force microscopy (KPFM) reliability trapping point defect Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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