NDLI: Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Content Provider	IEEE Xplore Digital Library
Author	Samsel, I.K. En Xia Zhang Hooten, N.C. Funkhouser, E.D. Bennett, W.G. Reed, R.A. Schrimpf, R.D. McCurdy, M.W. Fleetwood, D.M. Weller, R.A. Vizkelethy, G. Xiao Sun Tso-Ping Ma Saadat, O.I. Palacios, T.
Copyright Year	1963
Abstract	Charge collection mechanisms in AlGaN/GaN MOS-HEMTs are investigated. Device types include those with no gate oxide, and those with HfO₂ and Al₂O₃ gate oxides. Simultaneous charge collection is observed at the gate and the drain or the source, depending on strike location. Heavy ion data coupled with device simulations show that the introduction of a thin HfO₂ layer in the gate stack introduces only a small valence band barrier, reducing but not preventing collection of holes at the gate in HfO₂-gate devices. Furthermore, using Al₂O₃ gate oxide increases the valence band barrier over that of the HfO₂, to the point where the radiation-induced transient is not detectable.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	4439
Ending Page	4445
Page Count	7
File Size	1162516
File Format	PDF
ISSN	00189499
Volume Number	60
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Gallium nitride HEMTs Single event transients Transient analysis TCAD Aluminum gallium nitride (AlGaN) charge collection gallium nitride (GaN) high electron mobility transistor (HEMT) metal-oxide-semiconductor HEMT (MOS-HEMT) single-event transient
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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