NDLI: Self-Heating in GaN Transistors Designed for High-Power Operation

Content Provider	IEEE Xplore Digital Library
Author	Kuzmik, J. Tapajna, M. Valik, L. Molnar, M. Donoval, D. Fleury, C. Pogany, D. Strasser, G. Hilt, O. Brunner, F. Wurfl, J.
Copyright Year	1963
Abstract	DC and transient self-heating effects are investigated in normally off AlGaN/GaN transistors designed for a high-power operation. Electrical and optical methods are combined with thermal simulations; 2-μs-long voltage pulses dissipating about 4.5 W/mm are applied on four different transistor structures combining GaN or AlGaN buffer on an n-type SiC substrate with or without Ar implantation. Transistors with only 5% Al mass fraction in the buffer show almost a threefold increase in the transient self-heating if compared with devices on the GaN buffer. On the other hand, 2-μs-long pulses were found not to be long enough for the Ar-implanted SiC substrate to influence the device self-heating unless AlGaN composition changes. In the dc mode, however, both the buffer composition and Ar implantation significantly influence the self-heating effect with the highest temperature rise for the transistor having the AlGaN buffer grown on the Ar-implanted SiC. We point on possible tradeoffs between the transistor high-power design and the device thermal resistance.
Sponsorship	IEEE Electron Devices Society
Starting Page	3429
Ending Page	3434
Page Count	6
File Size	2478813
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Aluminum gallium nitride Silicon carbide Substrates Optical buffering HEMTs thermal resistance GaN high-electron mobility transistor (HEMT) optical characterization thermal characterization
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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