NDLI: Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

Content Provider	IEEE Xplore Digital Library
Author	Chung-Han Lin Merz, T.A. Doutt, D.R. Jungwoo Joh del Alamo, J.A. Mishra, U.K. Brillson, L.J.
Copyright Year	1963
Abstract	We use depth-resolved cathodoluminescence spectroscopy (DRCLS), Kelvin probe force microscopy (KPFM), and surface photovoltage spectroscopy (SPS) on a nanometer scale to map the temperature, strain, and defects inside GaN high-electron-mobility transistors. DRCLS maps temperature at localized depths, particularly within the 2-D electron gas region during device operation. KPFM maps surface electric potential across the device, revealing lower potential patches that decrease rapidly with increasing off-state stress. CL spectra acquired at these patches exhibit defect emissions that increase with both on- and off-state stresses and that increase with decreasing surface potential. SPS also reveals features of deep level gap states generated after device operation that reduce near-band-edge emission and increase surface band bending. Our nanoscale measurements are consistent with defect generation by inverse piezoelectric field-induced stress at the gate edge on the drain side at high voltage.
Sponsorship	IEEE Electron Devices Society
Starting Page	2667
Ending Page	2674
Page Count	8
File Size	1494566
File Format	PDF
ISSN	00189383
Volume Number	59
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Logic gates Temperature measurement Gallium nitride HEMTs Surface topography Strain temperature mapping AlGaN/GaN high-electron-mobility transistor (HEMT) defect characterization depth-resolved cathodoluminescence spectroscopy (DRCLS) HEMT Kelvin force probe microscopy strain mapping surface photovoltage spectroscopy (SPS)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Strain and temperature dependence of defect formation at algan/gan high-electron-mobility transistors on a nanometer scale.

Theoretical Investigation of Trigate AlGaN/GaN HEMTs

A novel AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor for performance improvement

Reliability testing of AlGaN/GaN HEMTs under multiple stressors

Characterization of AlGaN and GaN Based HEMT with AlN Interfacial Spacer

Analytical Model and Simulation for AlGaN/GaN High Electron Mobility Transistor

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Nanocrystalline Diamond-Gated AlGaN/GaN HEMT

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

Similar Documents

Strain and temperature dependence of defect formation at algan/gan high-electron-mobility transistors on a nanometer scale.

Theoretical Investigation of Trigate AlGaN/GaN HEMTs

A novel AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor for performance improvement

Reliability testing of AlGaN/GaN HEMTs under multiple stressors

Characterization of AlGaN and GaN Based HEMT with AlN Interfacial Spacer

Analytical Model and Simulation for AlGaN/GaN High Electron Mobility Transistor

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Nanocrystalline Diamond-Gated AlGaN/GaN HEMT

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale