NDLI: Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors

Content Provider	Springer Nature Link
Author	Datta, Kanak Shadman, Abir Rahman, Ehsanur Khosru, Quazi D. M.
Copyright Year	2016
Abstract	Two dimensional materials such as transition metal dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation in recent years due to their promising applications in electronics and optoelectronics. In this work, we have explored device level performance of trilayer TMDC heterostructure (MoS$_{2}$/MX$_{2}$/MoS$_{2}$; M = Mo or, W and X = S or, Se) metal oxide semiconductor field effect transistors (MOSFETs) in the quantum ballistic regime. Our simulation shows that device ‘on’ current can be improved by inserting a WS$_{2}$ monolayer between two MoS$_{2}$ monolayers. Application of biaxial tensile strain reveals a reduction in drain current which can be attributed to the lowering of carrier effective mass with increased tensile strain. In addition, it is found that gate underlap geometry improves electrostatic device performance by improving sub-threshold swing. However, increase in channel resistance reduces drain current. Besides exploring the prospect of these materials in device performance, novel trilayer TMDC heterostructure double gate field effect transistors (FETs) are proposed for sensing Nano biomolecules as well as for pH sensing. Bottom gate operation ensures these FETs operating beyond Nernst limit of 59 mV/pH. Simulation results found in this work reveal that scaling of bottom gate oxide results in better sensitivity while top oxide scaling exhibits an opposite trend. It is also found that, for identical operating conditions, proposed TMDC FET pH sensors show super-Nernst sensitivity indicating these materials as potential candidates in implementing such sensor. Besides pH sensing, all these materials show high sensitivity in the sub-threshold region as a channel material in nanobiosensor while MoS$_{2}$/WS$_{2}$/MoS$_{2}$ FET shows the least sensitivity among them.
Starting Page	1248
Ending Page	1260
Page Count	13
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	46
Issue Number	2
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2016-11-10
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	TMDC MOSFET sub-threshold swing drain induced barrier lowering NEGF pH sensor nanobiosensor drift–diffusion Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors

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