NDLI: Thermal Fatigue Behavior of Silicon-Carbide-Doped Silver Microflake Sinter Joints for Die Attachment in Silicon/Silicon Carbide Power Devices

Content Provider	Springer Nature Link
Author	Zhang, Hao Chen, Chuantong Nagao, Shijo Suganuma, Katsuaki
Copyright Year	2016
Abstract	We studied the thermal fatigue behavior of submicron silicon carbide particle (SiC$_{p}$)-doped silver (Ag) microflake sinter joints for die attachment in next-generation power devices. Si dummy chips and direct bonded copper substrates with various metallization schemes were bonded using SiC$_{p}$-doped Ag microflakes under mild conditions (250°C, 30 min, 0.4 MPa). The SiC$_{p}$ was distributed homogeneously in the porous Ag network and inhibited morphological evolution during thermal cycling tests. The shear strength of as-sintered pure Ag and SiC$_{p}$-added joints was ∼50 MPa and 35 MPa, respectively. Thermal cycling tests from −40°C to 250°C were conducted for up to 1000 cycles (hours) to characterize the thermostability of the bonded joints. After 1000 cycles, joints with and without SiC$_{p}$ experienced bonding degradation, with shear strength of ∼25 MPa and 20 MPa, respectively. Thus, after 1000 cycles, the shear strength of pure Ag and SiC$_{p}$-doped joints decreased by 58% and 42%, respectively, compared with their maximum value. Coarsening of porous Ag occurred in pure Ag joints. SiC$_{p}$ addition inhibited morphological evolution of SiC$_{p}$-doped joints during thermal cycling. However, vertical cracks generated by thermal stress were observed in joints both with and without SiC$_{p}$, which may limit long-term reliability.
Starting Page	1055
Ending Page	1060
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	46
Issue Number	2
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2016-10-31
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Silver flake sinter joining die attachment thermal cycling wide-bandgap semiconductor silicon carbide Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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