NDLI: Analog/RF Study of Self-aligned In$_{0.53}$Ga$_{0.47}$As MOSFET with Scaled Gate Length

Content Provider	Springer Nature Link
Author	Dehzangi, Arash Larki, Farhad Mohd Razip Wee, M. F. Wichmann, Nicolas Majlis, Burhanuddin Y. Bollaert, Sylvain
Copyright Year	2016
Abstract	This study presents the impact of gate length scaling on analog and radio frequency (RF) performance of a self- aligned multi-gate n-type In$_{0.53}$Ga$_{0.47}$As metal oxide semiconductor field effect transistor. The device is fabricated using a self-aligned method, air-bridge technology, and 8 nm thickness of the Al$_{2}$O$_{3}$ oxide layer with different gate lengths. The transconductance-to-normalized drain current ratio (g $_{m}$/I $_{D}$) method is implemented to investigate analog parameters. Moreover, g $_{m}$ and drain conductance (g $_{D}$) as key parameters in analog performance of the device are evaluated with g $_{m}$/I $_{D}$ and gate length variation, where g $_{m}$ and g $_{D}$ are both showing enhancement due to scaling of the gate length. Early voltage (V $_{EA}$) and intrinsic voltage gain (A $_{V}$) value presents a decreasing trend by shrinking the gate length. In addition, the results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.
Starting Page	782
Ending Page	789
Page Count	8
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	46
Issue Number	2
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2016-10-03
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Self-aligned In$_{0.53}$Ga$_{0.47}$As MOSFET transconductance-to-normalized drain current ratio transconductance intrinsic voltage gain analog performance Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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