NDLI: Improved Hydrogen Capping Effect in n-Type Crystalline Silicon Solar Cells by SiN(Si-Rich)/SiN(N-Rich) Stacked Passivation

Content Provider	Springer Nature Link
Author	Choi, Jaewoo Balaji, Nagarajan Dao, Vinh Ai Park, Cheolmin Lee, Seunghwan Kim, Jungmo Ju, Minkyu Lee, Hoongjoo Lee, Youn Jung Yi, Junsin
Copyright Year	2014
Abstract	The effect of hydrogen capping of SiN(Si-rich)/SiN(N-rich) stacks for n-type c-Si solar cells was investigated. Use of a passivation layer consisting of Si-rich SiN with a refractive index (n) of 2.7 and N-rich SiN with a refractive index of 2.1 improved the thermal stability. A single SiN passivation layer with a refractive index of 2.05 resulted in an initial lifetime of 200 μs whereas the layer with a refractive index of 2.7 resulted in a high initial lifetime of 2 ms, but the layer degraded rapidly after firing. A stacked passivation layer with refractive indices of 2.1 and 2.7 had a stable lifetime of 1.5 ms with an implied open-circuit voltage (iV $_{oc}$) of 720 mV after firing. The thermally stable passivation mechanism with changing amounts of Si–N and Si–H bonding was analyzed by Fourier-transform infrared (FTIR) spectroscopy. Incorporation of the SiN$_{ x }$ stack layer (2.7 + 2.1) into the passivated rear of n-type Cz silicon screen-printed solar cells resulted in energy conversion efficiency of 19.69%. Improved internal quantum efficiency in the long-wavelength range above 900 nm, with V $_{oc}$ of 630 mV, is mainly because of superior passivation of the rear surface compared with conventional solar cells.
Starting Page	3191
Ending Page	3195
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	43
Issue Number	9
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2014-06-04
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	SiN$_{ x }$ surface passivation firing stability Si–H bonding refractive index Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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