NDLI: Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates

Content Provider	Springer Nature Link
Author	Edmunds, C. Tang, L. Li, D. Cervantes, M. Gardner, G. Paskova, T. Manfra, M. J. Malis, O.
Copyright Year	2012
Abstract	We have investigated near-infrared absorption and photocurrent in lattice-matched AlInN/GaN and strained AlGaN/GaN heterostructures grown by molecular-beam epitaxy (MBE) on low-defect GaN substrates for infrared device applications. The AlGaN/GaN heterostructures were grown under Ga-rich conditions at 745°C. Material characterization via atomic force microscopy and high-resolution x-ray diffraction indicates that the AlGaN/GaN heterostructures have smooth and well-defined interfaces. A minimum full-width at half-maximum of 92 meV was obtained for the width of the intersubband absorption peak at 675 meV of a 13.7 Å GaN/27.5 Å Al$_{0.47}$Ga$_{0.53}$N superlattice. The variation of the intersubband absorption energy across a 1 cm × 1 cm wafer was ±1%. An AlGaN/GaN-based electromodulated absorption device and a quantum well infrared detector were also fabricated. Using electromodulated absorption spectroscopy, the full-width at half-maximum of the absorption peak was reduced by 33% compared with the direct absorption measurement. This demonstrates the suitability of the electromodulated absorption technique for determining the intrinsic width of intersubband transitions. The detector displayed a peak responsivity of 195 μA/W at 614 meV (2.02 μm) without bias. Optimal MBE growth conditions for lattice-matched AlInN on low-defect GaN substrates were also studied as a function of total metal flux and growth temperature. A maximum growth rate of 3.8 nm/min was achieved while maintaining a high level of material quality. Intersubband absorption in AlInN/GaN superlattices was observed at 430 meV with full-width at half-maximum of 142 meV. Theoretical calculations of the intersubband absorption energies were found to be in agreement with the experimental results for both AlGaN/GaN and AlInN/GaN heterostructures.
Starting Page	881
Ending Page	886
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	41
Issue Number	5
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2012-02-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Intersubband absorption near infrared quantum well infrared photodetector electromodulation III-nitride semiconductors molecular-beam epitaxy Solid State Physics Characterization and Evaluation of Materials Optical and Electronic Materials Electronics and Microelectronics, Instrumentation
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates

Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE (2012)

Comparative Study on Intersubband Absorption in AlGaN/GaN and AlInN/GaN Heterostructures Grown on Low-Defect Substrates

Intersubband Transitions in Lattice-Matched AlInN/GaN Heterostructures

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Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates

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