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Surface morphologies of AlGaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by rf-MBE
| Content Provider | Scilit |
|---|---|
| Author | Woo, J. C. Hasegawa, H. Kwon, Y. S. Yao, T. Yoo, K. H. |
| Copyright Year | 2005 |
| Description | We have reported that the use of vicinal sapphire (0001) substrates is promising for obtaining uniform stepped AIN surface in rf-MBE growth.[5] This technique is not only useful for AIN films, but also proper to GaN films. Therefore, we expect to apply the technique to the AlGaN films and AlGaN/GaN heterostructures in order to overcome the above problems. Book Name: Compound Semiconductors 2004 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-18739-X&isbn=9780429177101&doi=10.1201/9781482269222-59&format=pdf |
| Ending Page | 266 |
| Page Count | 4 |
| Starting Page | 263 |
| DOI | 10.1201/9781482269222-59 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2005-04-01 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Compound Semiconductors 2004 Sapphire Substrates Algan/gan Heterostructures Algan Films Vicinal Films and Algan/gan |
| Content Type | Text |
| Resource Type | Chapter |
