NDLI: A Bondable Metallization Stack That Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating Above 500°C

Content Provider	Springer Nature Link
Author	Spry, D.J. Lukco, D.
Copyright Year	2011
Abstract	We investigate use of tantalum silicide (TaSi$_{2}$, 400 nm)/platinum (Pt, 200 nm)/iridium (Ir, 200 nm)/platinum (Pt, 200 nm) as both a bond metal and a diffusion barrier to prevent oxygen (from air) and gold (from the wire bond) from infiltrating silicon carbide (SiC) monolithically integrated circuits operating above 500°C for over 1000 h in air. The TaSi$_{2}$/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. It can be used directly on ohmic contact metals, dielectric insulating layers, or interconnect metal, because it adheres to silicon dioxide (SiO$_{2}$), silicon nitride (Si$_{3}$N$_{4}$), and titanium (Ti). In this study, we investigate use of the new metallization of TaSi$_{2}$/Pt/Ir/Pt (in deposition order) with TaSi$_{2}$ resting on top of a Ti-SiC contact annealed at 600°C for 30 min in nitrogen, which allows the TaSi$_{2}$ layer to react with the bottom platinum layer to form the Pt$_{2}$Si diffusion barrier at the Pt-Ir interface. Since the iridium layer does not readily form a silicide, it prevents the silicon from migrating into the topmost platinum layer during further annealing or high-temperature integrated circuit operation. This leaves a pure platinum layer at the surface, ideal for gold wire bonding. We discuss the characteristics of the TaSi$_{2}$/Pt/Ir/Pt metallization at 500°C after 10 h, 100 h, and 1000 h in air ambient and N$_{2}$ ambient. Auger electron spectroscopy (AES) depth profiles of the metallization and field-emission scanning electron microscopy-focused ion beam (FESEM-FIB) cross-sections are also discussed.
Starting Page	915
Ending Page	920
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	41
Issue Number	5
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2011-10-21
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Iridium wire bond high temperature Solid State Physics Characterization and Evaluation of Materials Optical and Electronic Materials Electronics and Microelectronics, Instrumentation
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
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