NDLI: Growth Studies on Quaternary AlInGaN Layers for HEMT Application

Content Provider	Springer Nature Link
Author	Reuters, Benjamin Wille, A. Holländer, B. Sakalauskas, E. Ketteniss, N. Mauder, C. Goldhahn, R. Heuken, M. Kalisch, H. Vescan, A.
Copyright Year	2012
Abstract	Quaternary barrier layers for GaN-based high-electron-mobility transistors (HEMT) have recently been a focus of interest because of the possible lattice-matched growth to GaN. This results in a reduction of strain-related defects, while having the option of adjusting the bandgap separately. A further benefit of the quaternary approach is the possibility to achieve high polarization and high carrier mobility simultaneously. This may improve the performance of such devices beyond what is possible with ternary barrier layers. In this work, we report on growth and characterization of Al$_{ x }$In$_{ y }$Ga$_{1−x−y }$N barrier layers within the range of 16% to 56% Al, 2% to 45% In, and 20% to 82% Ga deposited on conventional GaN buffer layers on sapphire. We present an effective way to change the composition of quaternary layers and discuss the influence of tensile and compressive strain on structural and electrical properties. From high-resolution x-ray diffraction (HRXRD), Rutherford backscattering spectroscopy (RBS), and wavelength-dispersive x-ray spectroscopy (WDX), we determined the compositions and strain states of the AlInGaN layers. The bandgaps (E $_{g}$) were obtained by spectroscopic ellipsometry (SE). Hall and van der Pauw measurements on thin heterostructure layers yielded high mobilities in excess of 1550 cm$^{2}$/V s and 5350 cm$^{2}$/V s at room temperature and 77 K, respectively.
Starting Page	905
Ending Page	909
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	41
Issue Number	5
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2012-03-13
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	AlInGaN InAlGaN composition polarization HEMT Solid State Physics Characterization and Evaluation of Materials Optical and Electronic Materials Electronics and Microelectronics, Instrumentation
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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