NDLI: Effect of sulfur on dielectric properties of Cd

Content Provider	Springer Nature Link
Author	Ganaie, Mohsin Alvi, M. A. Zulfequar, M.
Copyright Year	2015
Abstract	Cd$_{4}$Se$_{96−x}$S$_{x}$ with x = 0, 4, 8, 12 amorphous semiconductor has been prepared by melt-quenching technique. Bulk samples in the form of powder were characterized by XRD which shows the amorphous nature of the prepared samples. The dielectric parameters were studied in the temperature range of 300–350 K and in the frequency range of 20 Hz–1 MHz. Dielectric dispersion are observed in the Cd–Se–S system, these results are explained on the basis of dipolar type of dielectric dispersion. It is also observed that DC conductivity increases and activation energy decrease with increase of sulfur concentration, which is mainly due to increase in the density of localized state in the mobility gap or decrease in the band gap.
Starting Page	2974
Ending Page	2978
Page Count	5
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	27
Issue Number	3
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2015-11-27
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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