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  1. Journal of Materials Science: Materials in Electronics
  2. Journal of Materials Science: Materials in Electronics : Volume 17
  3. Journal of Materials Science: Materials in Electronics : Volume 17, Issue 11, November 2006
  4. Dielectric properties of doped polystyrene and polymethylmethacrylate
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Journal of Materials Science: Materials in Electronics : Volume 28
Journal of Materials Science: Materials in Electronics : Volume 27
Journal of Materials Science: Materials in Electronics : Volume 26
Journal of Materials Science: Materials in Electronics : Volume 25
Journal of Materials Science: Materials in Electronics : Volume 24
Journal of Materials Science: Materials in Electronics : Volume 23
Journal of Materials Science: Materials in Electronics : Volume 22
Journal of Materials Science: Materials in Electronics : Volume 21
Journal of Materials Science: Materials in Electronics : Volume 20
Journal of Materials Science: Materials in Electronics : Volume 19
Journal of Materials Science: Materials in Electronics : Volume 18
Journal of Materials Science: Materials in Electronics : Volume 17
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 12, December 2006
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 11, November 2006
The preparation and characterization of quadrate NiFe$_{2}$O$_{4}$/polyaniline nanocomposites
Fabrication and characterization of Zr and Co co-doped LiMn$_{2}$O$_{4}$ nanowires using sol–gel–AAO template process
Dielectric properties of doped polystyrene and polymethylmethacrylate
Low-temperature-sintering and characterization of glass-ceramic composites
Effect of segregative additives on the positive temperature coefficient in resistance characteristics of n-BaTiO$_{3}$ ceramics
Microstructural and dielectric properties of donor doped (La$^{3+}$) CaCu$_{3}$Ti$_{4}$O$_{12}$ ceramics
Electrical properties of BaTiO$_{3}$-based NTC thermistors doped by BaBiO$_{3}$ and La$_{2}$O$_{3}$
Electrodeposition of Cu from acidic sulphate solutions in the presence of polyethylene glycol and chloride ions
Fatigue behavior of SrBi$_{2}$(Ta, Nb)$_{2}$O$_{9}$ ferroelectric thin films fabricated by pulsed laser deposition
The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films
Characteristics of annealed ZnO:Cu nanoparticles prepared by spray pyrolysis
Degradation of Sn37Pb and Sn3.5Ag0.5Cu solder joints between Au/Ni (P)/Cu pads stressed with moderate current density
Microstructure development and electrical properties of RuO$_{2}$-based lead-free thick film resistors
Structural, microstructural and dielectric studies of tin-doped barium niobate perovskite
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 10, October 2006
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 9, September 2006
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 8, August 2006
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 7, July 2006
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 6, June 2006
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 5, May 2006
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 4, April 2006
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 3, March 2006
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 2, February 2006
Journal of Materials Science: Materials in Electronics : Volume 17, Issue 1, January 2006
Journal of Materials Science: Materials in Electronics : Volume 16
Journal of Materials Science: Materials in Electronics : Volume 15
Journal of Materials Science: Materials in Electronics : Volume 14
Journal of Materials Science: Materials in Electronics : Volume 13
Journal of Materials Science: Materials in Electronics : Volume 12
Journal of Materials Science: Materials in Electronics : Volume 11
Journal of Materials Science: Materials in Electronics : Volume 10
Journal of Materials Science: Materials in Electronics : Volume 9
Journal of Materials Science: Materials in Electronics : Volume 8

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Dielectric properties of doped polystyrene and polymethylmethacrylate

Content Provider Springer Nature Link
Author Podgrabinski, Tomasz Švorčík, Vaclav Macková, Anna Hnatowicz, Vladimir Sajdl, Petr
Copyright Year 2006
Abstract About 1 μm thick films of polystyrene (PS) and polymethylmethacrylate (PMMA) doped with diphenylsulfoxide (DS) up to 40 wt.% were prepared from solutions using spin-coating method. Glass transition temperature (T $_{g}$) of doped polymer films was determined by DSC technique. The depth profile and surface concentration of DS dopant were measured by RBS and XPS methods, respectively. The temperature dependence of relative permittivity of the films was determined from capacitance measurement. The dependence of polarization (P) on electric field (E) was measured using a standard Sawyer–Tower circuit. The glass transition temperature T $_{g}$ of both composites was found to be decreasing function of the DS concentration. The DS doping leads to an increase of relative permittivity of the PS and PMMA films. RBS and XPS measurements reveal an outward diffusion of DS dopant in PS/DS films at elevated temperature. No such effect was observed in PMMA/DS films. PMMA/DS layers were found to be more thermally stable comparing to PS/DS.
Starting Page 871
Ending Page 875
Page Count 5
File Format PDF
ISSN 09574522
Journal Journal of Materials Science: Materials in Electronics
Volume Number 17
Issue Number 11
e-ISSN 1573482X
Language English
Publisher Kluwer Academic Publishers
Publisher Date 2006-01-01
Publisher Place Boston
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword Optical and Electronic Materials Characterization and Evaluation Materials
Content Type Text
Resource Type Article
Subject Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering
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