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Step ordering during fractional-layer superlattice growth on GaAs(001) vicinal surfaces by metalorganic chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Saito, Hisao Uwai, Kunihiko Tokura, Yasuhiro Fukui, Takashi |
| Copyright Year | 1993 |
| Abstract | Step ordering during fractional‐layer superlattice (FLS) growth is observed by trans‐ mission electron microscopy. A cross‐sectional transmission electron micrograph of an (AlAs)1/2(GaAs)1/2FLS shows that the steps of unequal spacings observed on a GaAs surface develop a sequence of uniformly spaced steps of single monolayer height during the growth. Comparison of the observed FLS structure with a numerical simulation based on the assumption of unequal incorporation probabilities of adatoms into up steps and down steps shows that a net flux into the up steps 2%–4% larger than that into the down steps is enough to reproduce the FLS growth. It is demonstrated that the FLS growth provides a unique opportunity to observe the step ordering process directly and determine the anisotropy of diffusion quantitatively. |
| Starting Page | 72 |
| Ending Page | 74 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.109700 |
| Volume Number | 63 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm1992/C-1-3/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.1063/1.109700 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
