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Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Xu, Dapeng P. Yang, Hui Li, Junbo Li, Shi Fang Wang, Yu Tian Zhao, Dongshan |
| Copyright Year | 2000 |
| Abstract | We have investigated the growth of GaN buffers by metalorganic chemical vapor deposition (MOCVD) on GaAs (100) substrates. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to study the dependence of the nucleation on the growth temperature, growth rate, annealing effect, and growth time. A two-step growth sequence must be used to optimize and control the nucleation and the subsequent growth independently. The size and distribution of islands and the thickness of buffer layers have a crucial role on the quality of GaN layers. Based on the experimental results, a model was given to interpret the formation of hexagonal-phase GaN in the cubic-phase GaN layers. Using an optimum buffer layer, the strong near-band emission of cubic GaN with full-width at half maximum (FWHM) value as small as 5.6 nm was observed at room temperature. The background carrier concentration was estimated to be in the range of 1013 ∼ 1014 cm−3. |
| Starting Page | 177 |
| Ending Page | 182 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s11664-000-0138-9 |
| Volume Number | 29 |
| Alternate Webpage(s) | https://deepblue.lib.umich.edu/bitstream/handle/2027.42/70328/JAPIAU-80-3-1823-1.pdf;jsessionid=E8B63A659F4BDD969C8899B3457559B9?sequence=2 |
| Alternate Webpage(s) | https://doi.org/10.1007/s11664-000-0138-9 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
