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Low-Temperature Growth of High Resistivity GaAs by Photoassisted Metalorganic Chemical Vapor Deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Roberts, John C. Boutros, Karim S. Bedair, Salah Mohamed Ali Look, David C. |
| Copyright Year | 1994 |
| Abstract | We report the photoassisted low‐temperature (LT) metalorganic chemical vapor deposition (MOCVD) of high resistivity GaAs. The undoped as‐grown GaAs exhibits a resistivity of ∼106 Ω cm, which is the highest reported for undoped material grown in the MOCVD environment. Photoassisted growth of doped and undoped device quality GaAs has been achieved at a substrate temperature of 400 °C in a modified atmospheric pressure MOCVD reactor. By using silane as a dopant gas, the LT photoassisted doped films have high levels of doping and electron mobilities comparable to those achieved by MOCVD for growth temperatures, Tg≳600 °C. |
| Starting Page | 2397 |
| Ending Page | 2399 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.111626 |
| Volume Number | 64 |
| Alternate Webpage(s) | https://corescholar.libraries.wright.edu/cgi/viewcontent.cgi?article=1049&context=physics&httpsredir=1&referer= |
| Alternate Webpage(s) | https://doi.org/10.1063/1.111626 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
