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The Growth of In x Ga 1-x Sb Epilayer on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using an Interfacial Misfit Dislocation GaSb Buffer Layer
| Content Provider | Semantic Scholar |
|---|---|
| Author | Huynh, S. |
| Copyright Year | 2016 |
| Abstract | The ternary InxGa1-xSb epilayers grown on GaAs substrate by metalorganic chemical vapor deposition (MOCVD) using an interfacial misfit dislocation (IMF) GaSb buffer layer is studied. The effect of the growth temperature on the crystal properties of the epilayer is also investigated. It is found that the composition of the epilayer depends significantly on the growth temperature, approaching to a saturation value above 580 o C. Under our optimum growth condition, the high quality In0.15Ga0.85Sb epilayer with a surface roughness of 0.8 nm and an FWHM of 253 arcsec is achieved. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/ssdm.2016.ps-8-10 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2016/PS-8-10/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/ssdm.2016.ps-8-10 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |