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Potential of HfN, ZrN, and TiH as hot carrier absorber and $Al_{2}O_{3}$/Ge quantum $well/Al_{2}O_{3}$and $Al_{2}O_{3}$/PbS quantum $dots/Al_{2}O_{3}$as energy selective contacts
| Content Provider | Scilit |
|---|---|
| Author | Shrestha, Santosh Chung, Simon Liao, Yuanxun Wang, Pei Cao, Wenkai Wen, Xiao Ming Gupta, Neeti Conibeer, Gavin |
| Copyright Year | 2017 |
| Description | Journal: Japanese Journal of Applied Physics The hot carrier (HC) solar cell is one of the most promising advanced photovoltaic concepts. It aims to minimise two major losses in single junction solar cells due to sub-band gap loss and thermalisation of above band gap photons by using a small bandgap absorber, and, importantly, collecting the photo-generated carriers before they thermalise. In this paper we will present recent development of the two critical components of the HC solar cell, i.e., the absorber and energy selective contacts (ESCs). For absorber, fabrication and carrier cooling rates in potential bulk materials — hafnium nitride, zirconium nitride, and titanium hydride are presented. Results of ESCs employing double barrier resonant tunneling structures $Al_{2}O_{3}$/Ge quantum well $(QW)/Al_{2}O_{3}$ and $Al_{2}O_{3}$/PbS quantum dots $(QDs)/Al_{2}O_{3}$ are also presented. These results are expected to guide further development of practical HC solar cell devices. |
| Related Links | http://iopscience.iop.org/article/10.7567/JJAP.56.08MA03/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.7567/jjap.56.08ma03 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 8S2 |
| Volume Number | 56 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2017-07-10 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Condensed Matter Physics |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
