NDLI: Current linearity and operation stability in $Al_{2}O_{3}$-gate AlGaN/GaN MOS high electron mobility transistors

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Current linearity and operation stability in $Al_{2}O_{3}$-gate AlGaN/GaN MOS high electron mobility transistors

Content Provider	Scilit
Author	Kaneki, Syota Ozaki, Shiro Hashizume, Tamotsu
Copyright Year	2017
Description	Journal: Japanese Journal of Applied Physics To investigate current linearity and operation stability of metal–oxide–semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the $Al_{2}O_{3}$-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I$ _{D}$–V$ _{G}$ curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance–voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the $Al_{2}O_{3}$/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.
Related Links	http://iopscience.iop.org/article/10.7567/JJAP.56.101001/pdf
ISSN	00214922
e-ISSN	13474065
DOI	10.7567/jjap.56.101001
Journal	Japanese Journal of Applied Physics
Issue Number	10
Volume Number	56
Language	English
Publisher	IOP Publishing
Publisher Date	2017-09-11
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Applied Physics Mos Hemts
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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