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Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with $HfO_{2}$ and $Al_{2}O_{3}$ gate insulators*
| Content Provider | Scilit |
|---|---|
| Author | Zhao, Yao-Peng Wang, Chong Zheng, Xue-Feng Ma, Xiao-Hua Liu, Kai Li, Ang He, Yun-Long Hao, Yue |
| Copyright Year | 2020 |
| Description | Journal: Chinese Physics B Two types of enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with different gate insulators are fabricated on Si substrates. The $HfO_{2}$ gate insulator and the $Al_{2}O_{3}$ gate insulator each with a thickness of 30 nm are grown by the plasma-enhanced atomic layer deposition (PEALD). The energy band diagrams of two types of dielectric MIS-HEMTs are compared. The breakdown voltage (V$ _{BR}$) of $HfO_{2}$ dielectric layer and $Al_{2}O_{3}$ dielectric layer are 9.4 V and 15.9 V, respectively. With the same barrier thickness, the transconductance of MIS-HEMT with $HfO_{2}$ is larger. The threshold voltage (V$ _{th}$) of the $HfO_{2}$ and $Al_{2}O_{3}$ MIS-HEMT are 2.0 V and 2.4 V, respectively, when the barrier layer thickness is 0 nm. The C–V characteristics are in good agreement with the V$ _{th}$’s transfer characteristics. As the barrier layer becomes thinner, the drain current density decreases sharply. Due to the dielectric/AlGaN interface is very close to the channel, the scattering of interface states will lead the electron mobility to decrease. The current collapse and the R$ _{on}$ of $Al_{2}O_{3}$ MIS-HEMT are smaller at the maximum gate voltage. As $Al_{2}O_{3}$ has excellent thermal stability and chemical stability, the interface state density of $Al_{2}O_{3}$/AlGaN is less than that of $HfO_{2}$/AlGaN. |
| Related Links | https://iopscience.iop.org/article/10.1088/1674-1056/ab8daa/pdf |
| ISSN | 16741056 |
| e-ISSN | 20583834 |
| DOI | 10.1088/1674-1056/ab8daa |
| Journal | Chinese Physics B |
| Issue Number | 8 |
| Volume Number | 29 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2020-04-28 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics B Applied Physics Condensed Matter Physics Mis Hemts Electron Mobility |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
