NDLI: A (S)TEM and atom probe tomography study of InGaN

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A (S)TEM and atom probe tomography study of InGaN

Content Provider	Scilit
Author	Mehrtens, Thorsten Bley, Stephanie Schowalter, Marco Sebald, Kathrin Seyfried, Moritz Gutowski, Jürgen Gerstl, Stephan S. A. Choi, Pyuck-Pa Raabe, Dierk Rosenauer, Andreas
Copyright Year	2011
Description	Journal: Journal of Physics: Conference Series In this work we show how the indium concentration in high indium content $In_{x}Ga_{1−x}$N quantum wells, as they are commonly used in blue and green light emitting diodes, can be deduced from high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. This method bases on introducing normalized intensities which can be compared with multislice simulations to determine the specimen thickness or the indium concentration. The evaluated concentrations are compared with atom probe tomography measurements. It is also demonstrated how the quality of focused ion beam prepared TEM-lamellas can be improved by an additional etching with low energy ions.
Related Links	http://iopscience.iop.org/article/10.1088/1742-6596/326/1/012029/pdf
ISSN	17426588
e-ISSN	17426596
DOI	10.1088/1742-6596/326/1/012029
Journal	Journal of Physics: Conference Series
Issue Number	1
Volume Number	326
Language	English
Publisher	IOP Publishing
Publisher Date	2011-11-09
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics: Conference Series Microscopic Research Scanning Transmission Electron Microscopy Atom Probe Tomography Quantum Well Light Emitting Diode Focused Ion Beam
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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