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Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InGaN Multiple Quantum Well Light Emitting Diode
| Content Provider | Semantic Scholar |
|---|---|
| Author | Bunker, K. L. Garcia, Ronald Russell, Phillip E. |
| Copyright Year | 2004 |
| Abstract | This work involves the development and application of a Scanning Electron Microscopy (SEM)based Cathodoluminescence (CL) system for the investigation of piezoelectric fields in an indium gallium nitride (InGaN)-based optoelectronic device. SEM-based CL experiments in a Hitachi S3200N were used to study the influence of piezoelectric fields on the luminescence properties of a commercial Cree, Inc. InGaN-based MQW X-Bright green Light Emitting Diode [1]. The existence and direction of the piezoelectric field in the InGaN-based device were investigated using SEM-CL peak voltage dependence and carrier generation density (i.e. beam current) dependence studies. Supporting evidence for the existence of a piezoelectric field in the device was determined from forward bias electroluminescence experiments. |
| File Format | PDF HTM / HTML |
| DOI | 10.1557/PROC-831-E11.41 |
| Alternate Webpage(s) | https://www.cambridge.org/core/services/aop-cambridge-core/content/view/DD6A266DF54DFE1D47A80BE0C2300DA3/S1431927605507815a.pdf/scanning_electron_microscopy_cathodoluminescence_studies_of_piezoelectric_fields_in_an_ingan_multiple_quantum_well_lightemitting_diode.pdf |
| Alternate Webpage(s) | https://doi.org/10.1557/PROC-831-E11.41 |
| Volume Number | 831 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
