NDLI: STEM imaging of InP/AlGaInP quantum dots

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STEM imaging of InP/AlGaInP quantum dots

Content Provider	Scilit
Author	Qiu, Y. Krysa, Andrey Walther, Thomas
Copyright Year	2010
Description	Journal: Journal of Physics: Conference Series InP quantum dot structures embedded between ternary AlInP, ternary GaInP or quaternary AlGaInP have been grown by metal organic vapour phase epitaxy on GaAs(001) at temperatures of 640 °C or 730 °C under different growth conditions and were investigated by scanning transmission electron microscopy (STEM). We found quantum dots higher than 2nm only for samples grown at 640 °C and the sample grown at 730°C with the lowest growth rate and additional growth interrupts. For the higher growth temperature and high growth rates quantum dot sizes evolve differently: the dots either stay much smaller and remain embedded into the wetting layer, essentially forming quantum wells with lateral compositional variations, or occasionally they can form agglomerates of super-size islands that protrude to the surface. This demonstrates that quantum dot formation is favoured by slow growth, while fast kinetics promotes flat layer growth.
Related Links	http://iopscience.iop.org/article/10.1088/1742-6596/245/1/012087/pdf
ISSN	17426588
e-ISSN	17426596
DOI	10.1088/1742-6596/245/1/012087
Journal	Journal of Physics: Conference Series
Issue Number	1
Volume Number	245
Language	English
Publisher	IOP Publishing
Publisher Date	2010-09-01
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics: Conference Series Microscopic Research Quantum Well Quantum Dot Scanning Transmission Electron Microscopy
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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