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Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ye, Gang Wang Arulkumaran, Subramaniam Ng, Geok Ing Hofstetter, René Li, Yang Anand, M. J. Ang, Kian Siong Maung, Y. K. T. |
| Copyright Year | 2013 |
| Abstract | In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is reported. The ZrO2 AlGaN/GaN MISHEMTs showed improved maximum drain current density (Idmax) with high peak transconductance (gmmax) as comparison to Schottky-barrier-gate HEMTs (SB-HEMTs). Also compared to SB-HEMTs, reverse gate leakage current was four orders of magnitude lower and forward gate bias extended to +7.4 V. At energy from −0.29 eV to −0.36 eV, low interface trap state density evaluated by AC conductance and “Hi-Lo frequency” methods indicates good quality of atomic-layer-deposited ZrO2 dielectric layer. |
| Starting Page | 142109 |
| Ending Page | 142109 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.4824445 |
| Alternate Webpage(s) | https://dr.ntu.edu.sg/bitstream/handle/10220/18429/Atomic%20layer%20deposition%20of%20ZrO2%20as%20gate%20dielectrics%20for%20AlGaNGaN%20metal-insulator-semiconductor%20high%20electron%20mobility%20transistors%20on%20silicon.pdf;jsessionid=856A34550EA5A8A1041C20BA869764D8?sequence=1 |
| Alternate Webpage(s) | https://dr.ntu.edu.sg/bitstream/handle/10220/18429/Atomic%20layer%20deposition%20of%20ZrO2%20as%20gate%20dielectrics%20for%20AlGaNGaN%20metal-insulator-semiconductor%20high%20electron%20mobility%20transistors%20on%20silicon.pdf?isAllowed=y&sequence=1 |
| Alternate Webpage(s) | https://dr.ntu.edu.sg/bitstream/handle/10220/18429/Atomic%20layer%20deposition%20of%20ZrO2%20as%20gate%20dielectrics%20for%20AlGaNGaN%20metal-insulator-semiconductor%20high%20electron%20mobility%20transistors%20on%20silicon.pdf;jsessionid=7E74F868EB805EB8EE125B5B7056299F?sequence=1 |
| Alternate Webpage(s) | https://doi.org/10.1063/1.4824445 |
| Volume Number | 103 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |