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Characterization of Al2O3/GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths
| Content Provider | Semantic Scholar |
|---|---|
| Author | Xiao-Hua, Ma Caiyuan, Pan Li-Yuan, Yang Hui-You, Yu Ling, Yang Si, Quan Hao, Wang Jin-Cheng, Zhang |
| Copyright Year | 2011 |
| Abstract | In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal—insulator—semiconductor (MIS) high electron mobility transistors (HEMTs), we demonstrate better performances of recessed-gate Al2O3 MIS-HEMTs which are fabricated by Fluorine-based Si3N4 etching and chlorine-based AlGaN etching with three etching times (15 s, 17 s and 19 s). The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of AlGaN/GaN HEMT. Through the recessed-gate etching, the transconductance increases effectively. When the recessed-gate depth is 1.02 nm, the best interface performance with τit = (0.20−1.59) μs and Dit = (0.55−1.08) × 1012 cm−2 eV−1 can be obtained. After chlorine-based etching, the interface trap density reduces considerably without generating any new type of trap. The accumulated chlorine ions and the N vacancies in the AlGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices. By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times, it is found that a low power chlorine-based plasma etching for a short time (15 s in this paper) can enhance the performances of MIS-HEMTs effectively. |
| Starting Page | 027304 |
| Ending Page | 027304 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1088/1674-1056/20/2/027304 |
| Alternate Webpage(s) | https://www.xidian.edu.cn/hyjsktz//docs/20110517102053421740.pdf |
| Alternate Webpage(s) | https://doi.org/10.1088/1674-1056%2F20%2F2%2F027304 |
| Volume Number | 20 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
