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AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with $Si_{3}N_{4}$Gate Insulator
| Content Provider | Scilit |
|---|---|
| Author | Ochiai, Masaru Akita, Mitsutoshi Ohno, Yutaka Kishimoto, Shigeru Maezawa, Kouichi Mizutani, Takashi |
| Copyright Year | 2003 |
| Description | Journal: Japanese Journal of Applied Physics AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using $Si_{3}N_{4}$ film as a gate insulator have been successfully fabricated. The gate leakage current decreased by about three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the $Si_{3}N_{4}$ gate insulator. The low-frequency noise of the MIS-HEMTs was smaller than that of the conventional HEMTs. Current collapse has also been suppressed in the MIS-HEMTs. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.42.2278/pdf |
| Ending Page | 2280 |
| Page Count | 3 |
| Starting Page | 2278 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.42.2278 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | Part 1, No |
| Volume Number | 42 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2003-04-30 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Quantum Science and Technology High Electron Mobility Transistor Low Frequency Noise Leakage Current |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
