Loading...
Please wait, while we are loading the content...
Similar Documents
Direct Growth ofa-Plane GaN onr-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy
| Content Provider | Scilit |
|---|---|
| Author | Araki, Masahiro Mochimizo, Noriaki Hoshino, Katsuyuki Tadatomo, Kazuyuki |
| Copyright Year | 2007 |
| Description | Journal: Japanese Journal of Applied Physics We have investigated the direct growth of nonpolar a-plane GaN layers on an r-plane sapphire substrate by metalorganic vapor-phase epitaxy (MOVPE). A high-density nucleation of GaN islands was obtained on the r-plane sapphire substrate at the initial stage of the high-temperature growth without a buffer layer, which resulted in a two-dimensional (2D) growth mode. We studied the effects of V/III ratio growth conditions on the surface morphology and growth features of an a-plane GaN layer. The results showed that a high density of pits with an inverse-pyramidal shape were formed at a high V/III ratio, whereas a relatively low density of pits were formed at a low V/III ratio due to the increase in the rate of lateral growth along the c-axis direction. We successfully grew a-plane GaN layers with a flat and pit-free surface using the "two-step growth method". The method consisted of growing a first layer at a high V/III ratio and growing a second layer at a low V/III ratio. We found that the first layer plays an important role in GaN layer growth. The formation of a void-free GaN layer with sidewall facets in the first step leads to a flat and pit-free layer grown at a high rate of lateral growth along the c-axis direction in the second step. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.46.555/pdf |
| Ending Page | 559 |
| Page Count | 5 |
| Starting Page | 555 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.46.555 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 2 |
| Volume Number | 46 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2007-02-08 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Cultural Studies Gan Layer Plane Gan V/iii Ratio |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
