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TEM studies of deformation-induced defects in gallium arsenide
| Content Provider | Scilit |
|---|---|
| Author | Cooman, B. C. De Carter, C. B. |
| Copyright Year | 2021 |
| Description | The dislocation structure of plastically deformed III-V compounds is presented. The doping dependence of the dislocation velocities is clearly observed in high stress deformed specimens. Local stacking fault widening points to strong interaction between point defects and the core of individual partial dislocations. At low temperatures, the III-V compounds deform not only by dislocation glide: alternative deformation modes such as the movement of individual partial dislocations and microtwinning are observed. The importance of the high stress deformation technique is demonstrated by the obvious connection to the growth of lattice mismatched multilayer structures needed for specific electronic applications. Book Name: Microscopy of Semiconducting Materials, 1987 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 268 |
| Page Count | 10 |
| Starting Page | 259 |
| DOI | 10.1201/9781003069621-42 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Metallurgy and Metallurgical Engineering Stress Dislocation Deformation Defects Structures Compounds Plastically Individual Partial |
| Content Type | Text |
| Resource Type | Chapter |
